Distributed current blocking structures for light emitting diodes

ABSTRACT

An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions. In yet another aspect, current blocking structures are created by etching away highly doped contact regions to form regions of resistive contact between conductive layers.

The present application is a Continuation of U.S. application Ser. No.13/198,664, filed Aug. 4, 2011, pending, the contents of which are allherein incorporated by this reference in their entireties. Allpublications, patents, patent applications, databases and otherreferences cited in this application, all related applicationsreferenced herein, and all references cited therein, are incorporated byreference in their entirety as if restated here in full and as if eachindividual publication, patent, patent application, database or otherreference were specifically and individually indicated to beincorporated by reference.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor light emittingdevices and particularly to the efficient generation of light insemiconductor light emitting devices.

BACKGROUND INFORMATION

A Light Emitting Diode (LED) is a solid state device that convertselectrical energy to light. Light is emitted from an active layer ofsemiconductor materials sandwiched between oppositely doped layers whena voltage is applied across the doped layers. The efficiency of an LEDstructure at converting energy to light determines whether the LED issuitable for certain applications. For example, use of LEDs in lightingapplications requires high efficiency, reliability, and low cost.Advances in semiconductor materials and improvement in LED architectureshave led to improvement in efficiency.

U.S. Pat. No. 6,121,635 to Watanabe discloses a current blocking layerpositioned below a top electrode for increasing the luminous efficiencyof the LED. Because the current blocking layer is below the topelectrode, is light transparent, and extends beyond the perimeter of thetop electrode, the current blocking layer prevents high current densityin a region of the LED where any light emitted would be blocked by thenontransparent top electrode. The disclosure of Watanabe indicates thatincreased efficiency is achieved by preventing emission of light underthe nontransparent electrode. The current is directed elsewhere so thatthe resulting generated light can escape the device. U.S. Pat. No.7,247,985 to Koneko similarly suggests improved electrical energyconversion by providing two current blocking structures in an LED. Afirst current blocking structure is disposed directly under the topelectrode in a central region. A second current blocking structure isdisposed in an outer region surrounding the central region. The secondregion functions to define the shape of the light emitting region andKoneko says improved light-emission performance is achieved. The use ofone current blocking structure or a pair of current blocking structuresas disclosed in these patents may create some gains in efficiency butthese prior art structures also have limitations.

FIG. 1 (Prior Art) is a cross-sectional side view of a conventionallateral LED device 1. Lateral LED device 1 includes a bond wire 2,p-electrode 3, Indium Tin Oxide (“ITO”) transparent conductive layer 4,current blocking layer 5, p++GaN layer 6, p-GaN layer 7, active layer 8,n-GaN layer 9, growth substrate layer 10, n-electrode 11 and regions ofnon-uniform light generation 12. P-electrode 3 and n-electrode 11 arenon-transparent metal layers. During operation of lateral LED device 1,a voltage is placed across p-electrode 3 and n-electrode 11 of lateralLED device 1 causing a current to flow from p-electrode 3 to n-electrode11. This flow of current causes light to be generated in active layer 8.Current blocking layer 5 is a transparent insulating layer and isdisposed between p-electrode 3 and light-emitting active layer 8 toprevent the emission of light under non-transparent metal p-electrode 3.Current blocking layer 5 thus prevents current flow and light emissionin a portion of active layer 8 where overlying metal p-electrode 3 wouldobstruct the emitted light. Current flow is thus directed to otherportions of active layer 8 which increases the luminous efficiency ofthe device. Because the resistance of ITO layer 4 and p-GaN layer 7 ishigher than n-GaN layer 9, the current flowing from p-electrode 3through n-GaN layer 9 tends to be concentrated at the edge of currentblocking layer 5 nearest p-electrode 3. Current flow farther fromp-electrode 3 is less dense and this disparity leads to non-uniformlight generation 12, local heating from the concentration of electricalcurrents, and potential damage to lateral LED device 1.

FIG. 2 (Prior Art) is a cross-sectional side view of a conventionalvertical LED device 20. Vertical LED device 20 includes: n-electrode 21,n-GaN layer 22, active layer 23, p-GaN layer 24, p++GaN layer 25,current blocking layer 26, highly reflective layer 27, encapsulant layer28, barrier metal 29, bond metal layer 30, adhesion layer 31, conductivecarrier 32, p-electrode 34, and regions of non-uniform light generation35. During operation of the vertical LED device 20, a voltage is placedacross the device such that current flows from metal p-electrode 34 tometal n-electrode 21. As current flows through active layer 23, light isgenerated. Current blocking layer 26 is disposed between p-electrode 34and active layer 23 to prevent current flow and light emission under thenon-transparent metal n-electrode 21. The highly reflective layer 27 ishighly conductive, so the entire p++GaN region 25 to the right ofcurrent blocking layer 26 is essentially equipotential. The overlyingn-GaN layer 22, however, is somewhat resistive and limits currentspreading. Current density in regions closer to n-electrode 21 istherefore greater than current density in regions farther away fromn-electrode 21. This disparity in current density causes non-uniformlight generation 35 in vertical LED device 20. Moreover, the highcurrent density closest to n-electrode 21 may cause local heating anddamage to LED device 20. An LED device with improved luminous efficiencyand uniform light generation is desired.

SUMMARY

In a first novel aspect, an LED device includes a strip-shapedelectrode, a strip-shaped current blocking structure, a plurality ofcurrent blocking structures and a light emitting active layer. Theplurality of current blocking structures are distributed in such amanner to prevent current flow to/from the strip-shaped electrode fromconcentrating in an area immediately adjacent the strip-shaped currentblocking structure or in the area under the strip-shaped electrode.Instead, the plurality of current blocking structures are placed anddistributed such that current flow in the light emitting active layer issubstantially uniform in portions of the active layer that are notdirectly underneath the strip-shaped electrode.

In a second novel aspect, an LED device includes a strip-shapedelectrode, a strip-shaped current blocking structure, a plurality ofcurrent blocking structures, a highly reflective metal layer, a p-GaNlayer and a p++GaN layer. The strip-shaped current blocking structureand the plurality of current blocking structures are formed by etchingaway selected portions of the p++GaN layer to create relatively lowconductive non-ohmic contacts between the highly reflective metal layerand the p-GaN layer. This etching away of portions of the p++GaN layeris performed by standard semiconductor processing techniques such asReactive Ion Etching (RIE) or any other suitable processing method. Inareas where the p++GaN is etched away from the surface of the p-GaN,current flow is impeded or blocked.

In a third novel aspect, an LED device includes a strip-shapedelectrode, a strip-shaped current blocking structure, a plurality ofdistributed current blocking structures, and a layer of p-GaN. Thestrip-shaped current blocking structure and the plurality of distributedcurrent blocking structures are formed by damaging selected portions ofthe p-GaN layer to create relatively high resistive portions within thep-GaN layer. High density plasma may be utilized to form the relativelyhigh resistive portions by locally heating selected portions of thep-GaN layer. When an electric field is applied, the areas of damagedp-GaN portions impede or block current flow in such a way that currentflow through the current blocking layer is distributed and spread.Current flow through the portion of the active layer that is notdirectly underneath the strip-shaped electrode is substantially uniform,whereas the strip-shaped current blocking structure effectively blockscurrent from flowing through the portion of the active layer that isdirectly underneath the strip-shaped electrode. Because the current flowthrough the active layer is substantially uniform in this way,substantially uniform light generation occurs in the active layeroutside of the area underneath the strip-shaped electrode.

The entire current blocking layer can be considered together, where eachunit area of the layer has a porosity (the amount of the area that isnot covered or blocked by any current blocking structure as compared tothe total area). This porosity is made to vary across the layer suchthat current flow through the active layer of the LED is substantiallyuniform in all areas of the active layer, except for those areas of theactive layer disposed directly under an opaque object (such as a metalelectrode) where there is substantially no current flow.

Further details and embodiments and techniques are described in thedetailed description below. This summary does not purport to define theinvention. The invention is defined by the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, where like numerals indicate like components,illustrate embodiments of the invention.

FIG. 1 (Prior Art) is a cross-sectional diagram of light generation in alateral Light Emitting Diode (LED) device.

FIG. 2 (Prior Art) is a cross-sectional diagram of light generation in avertical LED device.

FIG. 3 is a top-down diagram of an LED device in accordance with onenovel aspect.

FIG. 4 is a simplified conceptual cross-sectional diagram of a genericLED device structure in accordance with one novel aspect.

FIG. 5 is a top-down diagram of the generic LED device structure of FIG.4.

FIG. 6 is a simplified conceptual diagram illustrating the resistancesof area A, area B and area C in the generic LED device structure of FIG.5.

FIG. 7 is a cross-sectional side view of a vertical LED device having aplurality of current blocking structures that are sized and distributedso that a uniform amount of light is generated across the active layer(except in portions of the active layer under an opaque electrode wherethe current blocking layer effectively prevents light generation).

FIG. 8 is a cross-sectional side view of a vertical LED device where thedistributed current blocking structures are formed by damaging selectedportions of the p++GaN and p-GaN layers.

FIG. 9 is a cross-sectional side view of a vertical LED device where thedistributed current blocking structures are formed by etching awayselected portions of the p++GaN layer.

FIG. 10 is a cross-sectional diagram of a lateral LED device having aplurality of distributed current blocking structures.

FIG. 11 is a flowchart of a method in accordance with one novel aspect.

DETAILED DESCRIPTION

Reference will now be made in detail to some embodiments of theinvention, examples of which are illustrated in the accompanyingdrawings. In the description and claims below, when a first layer isreferred to as being disposed “over” a second layer, it is to beunderstood that the first layer can be directly on the second layer, oran intervening layer or layers may be present between the first andsecond layers. The terms such as “over”, “under”, “underneath”, “upper”,“lower”, “top”, “bottom”, “upward”, “downward”, “vertically”, and“laterally” are used herein to describe relative orientations betweendifferent parts of the LED being described, and it is to be understoodthat the overall LED structure being described can actually be orientedin any way in three-dimensional space.

FIG. 3 is a top-down diagram of an LED device 40. LED device 40 includesa strip-shaped electrode 41, a strip-shaped current blocking structure42, and a plurality of current blocking structures 43. The plurality ofcurrent blocking structures 43 includes multiple rows of disc-shapedcurrent blocking structures, “discs”, disposed on each side of electrode41 in the lateral dimension. The strip-shaped current blocking structure42 and the plurality of current blocking structures 43 are disposed in alayer of the LED device 40 that is below the layer of the metal ofelectrode 41. Sectional line A-A is shown in FIG. 3 extendingperpendicularly outward from a strip-shaped portion of electrode 41.Sectional line B-B is also shown in FIG. 3 and line B-B perpendicularlydissects another strip-shaped portion of electrode 41.

FIG. 4 is a simplified conceptual cross-sectional diagram of a genericLED device. This LED device may either be a vertical LED device or alateral LED device. In the case of the LED of FIG. 4 being a verticalLED device, current 44 flows from a p-electrode (not shown) below thestructure shown, up through the current blocking layer 45, then throughan p-GaN layer (not shown), a light generating active layer (not shown),an n-GaN layer (not shown), and to the strip-shaped electrode 41. In thecase of the LED of FIG. 4 being a lateral LED device, current 44 flowsfrom strip-shaped electrode 41, laterally through a transparentconductor layer (not shown), then vertically down through the currentblocking layer 45, then through a p-GaN layer (not shown), an activelayer (not shown), an n-GaN layer (not shown), and to an n-electrode(not shown). In both cases, the current blocking layer 45 includes thestrip-shaped current blocking structure 42 and the plurality of currentblocking structures 43. Four of the plurality of current blockingstructures (46, 50, 54, 58) are illustrated in cross-section in FIG. 4.Strip-shaped current blocking structure 42 is disposed directlyunderneath metal strip-shaped electrode 41, but is slightly wider thanstrip-shaped electrode 41. Strip-shaped current blocking structure 42blocks current from flowing through the portion of the active layer (notshown) directly underneath the strip-shaped electrode 41. Consequentlysubstantially no light is emitted in the portion of the active layerdirectly underneath strip-shaped electrode 41.

FIG. 5 is a top-down diagram of the generic LED device of FIG. 4. Thestrip-shaped electrode 41 and the strip-shaped current blockingstructure 42 extend lengthwise in a first direction 62. FIG. 5 alsoillustrates three square areas: area A 63, area B 64, and area C 65.These three square areas A, B, and C abut each other and extend in a rowaway from the right edge 66 of the strip-shaped current blockingstructure 42. The three square areas extend in a row extending to theright in the illustration in a second direction 67 perpendicular tofirst direction 62. The strip-shaped current blocking structure 42 andthe plurality of current blocking structures 46-61 are separate featuresformed from a layer of an insulating material. The current blockingstructures 46-61 are disposed in a two-dimensional array as illustrated.In one example, the separate features are 200 nm thick separate featuresof silicon dioxide. In other embodiments, strip-shaped current blockingstructure 42 and current blocking structures 46-61 are separate featuresof silicon nitride. The strip-shaped current blocking structures 46-61can also be made of other insulative materials.

In the illustrated example, current blocking structures 46-61 are discsapproximately five microns in diameter. Discs 46-49 are aligned in afirst row that extends parallel to first direction 62 as illustrated.Discs 50-53 are aligned in a second row that extends parallel to thefirst row as illustrated. Discs 54-57 are aligned in a third row thatextends parallel to the first and second rows as illustrated. Discs58-61 are aligned in a fourth row that extends parallel to each of thefirst, second and third rows as illustrated. The first row of discs isspaced a first distance D1 away from the right edge 66 of strip-shapedcurrent blocking structure 42 in the second direction 67. The second rowof discs is spaced a second distance D2 from the first row of discs inthe second direction 67. The third row of discs is spaced a thirddistance D3 from the second row in the second direction 67. The fourthrow of discs is spaced a fourth distance D4 from the third row in thesecond direction 67. In one embodiment, D4 is greater than D3, and D3 isgreater than D2, and D2 is greater than D1.

Area A 63, area B 64, and area C 65 are square shaped areas. In thespecific illustrated embodiment, each of these areas is a square areafour hundred square microns in size. At least a first one of theplurality of current blocking structures 43 covers a portion of area A(covers X percent of area A). At least a second one of the plurality ofcurrent blocking structures 43 covers a portion of area B (covers Ypercent of area B). At least a third one of the plurality of currentblocking structures 43 covers a portion of area C (covers Z percent ofarea C). In the illustrated case, X percent is greater than Y percent,and Y percent is greater than Z percent.

FIG. 6 is a simplified conceptual diagram illustrating the resistancesof area A 63, area B 64 and area C 65. In this illustration, each of thethree areas A, B, and C, contains two resistors. The value of the firstresistor, 1R, in each area represents the lateral resistance through aconductive layer or layers disposed above the plane of the currentblocking structures (between the plane of the top of current blockingstructures and the plane of the bottom of the strip-shaped electrode).In the example of the generic device being a vertical LED device, theconductive layers above layer 45 of the current blocking structuresinclude a p++GaN layer, a p-GaN layer, an active layer, and an n-GaNlayer. In the example of the generic device being a lateral LED device,the conductive layers above the layer of the current blocking structuresinclude a transparent conductor layer (for example, Indium Tin Oxide).

The second resistor in each area represents the vertical resistance thatelectrical current will pass through as it flows vertically between thefeatures of the current blocking layer 45. Because area A includes thehighest percentage area of current blocking discs, X percent, thevertical resistance of area A is 3R in this illustration. This value,3R, is greater than the vertical resistance of area B which is 2R, andthe vertical resistance of area C which is 1R. When the laterallyoriented 1R resistances are considered along with the verticallyoriented resistances 3R, 2R and 1R, the overall resistance between thestrip-shaped electrode 41 through any of the three areas, A, B, and C isequal to 4R. Therefore the amount of current flowing through the activelight emitting region of the LED device from or to any of the threeareas is substantially the same. The resistance values 1R, 2R and 3R inthe diagram of FIG. 6 are not measured values, but rather are presentedin the diagram only for conceptual illustrative purposes.

FIG. 7 is a cross-sectional diagram of a portion of a vertical LEDdevice 100. The cross-sectional view of FIG. 7 may, for example,represent the cross-section B-B in the structure of FIG. 3. Vertical LEDdevice 100 includes metal n-electrode 101, n-GaN layer 102, active layer103, p-GaN layer 104, p++GaN layer 105, highly reflective layer 106,encapsulant layer 107, barrier metal layer 108, bond metal layer 109,adhesion layer 110, carrier substrate 111, p-electrode 112, strip-shapedcurrent blocking structure 113 and a plurality of distributed currentblocking structures 114-121. The n-GaN layer 102 is approximately 5000nm thick and makes contact with n-electrode 101. Active layer 103 isapproximately 130 nm thick and is disposed between n-GaN layer 102 and a300 nm thick layer of p-GaN 104. The p-GaN layer 104 is directly above a20 nm thick p++GaN layer 105. The current blocking structures 113-121are disposed between the p++GaN layer 105 and highly reflective layer106 and are created by depositing a 200 nm thick insulating layer ofsilicon dioxide or silicon nitride on the p++GaN layer and thenpatterning and etching the insulating layer using standard processingtechniques such as RIE.

After etching of the insulating layer to form the current blockingstructures, the 200 nm thick highly reflective layer 106 is formed overthe current blocking structures. The 100 nm thick layer of encapsulant107 is formed over the highly reflective layer 106. The barrier metallayer 108 is then added. Barrier metal layer is a single layer oftitanium more than 50 nm thick. Bond metal 109 is provided to bond thestructure above the bond metal layer to the structure below the bondmetal layer. The structure below the bond metal layer includes adhesionlayer 110, carrier substrate 111, and p-electrode 112. Adhesion layer110 is 200 nm thick. Carrier substrate 111 is 150,000 nm thick. Themetal p-electrode 112 covers the entire bottom surface of carriersubstrate 111 as illustrated and is approximately 200 nm thick.

When vertical LED device 100 of FIG. 7 is emitting light, a voltage ispresent between the metal electrodes 112 and 101. Current flows frommetal p-electrode 112, up through carrier substrate 111, throughadhesion layer 110, bond metal layer 109, barrier metal layer 108,encapsulant layer 107, highly reflective layer 106, p++GaN 105, andp-GaN layer 104 into light-emitting active layer 103. Current is blockedfrom flowing into the portion of active layer 103 underneath n-electrode109 by strip-shaped current blocking structure 113. No light istherefore generated in the portion of the active layer directlyunderneath n-electrode 101. In all other portions of active layer 103, asubstantially uniform amount of light is emitted. The current blockingstructures 114-121 that are closer to the strip-shaped current blockingstructure 113 are spaced closer to one another, and the spacing betweenadjacent current blocking structures increases extending laterally awayfrom the strip-shaped current blocking structure 113. Note, for example,that current blocking structure 118 is spaced relatively close to theright edge of strip-shaped current blocking structure 113, whereascurrent blocking structure 121 is spaced relatively farther away fromthe right edge of current blocking structure 120. The layer of thecurrent blocking structures 113-121 is only 320 nm away from activelayer 103, whereas the active layer 103 is approximately 5000 nm fromthe n-electrode 101. Lateral current flow occurs primarily through thethick n-GaN layer 102.

FIG. 8 is a cross-sectional diagram of an embodiment of a vertical LEDdevice 130 where the current blocking structures are formed by damagingp++GaN and p-GaN material. For example, after n-GaN layer 132, activelayer 133, p-GaN layer 134, and p++GaN layer 135 have been formed, ahigh density plasma may be utilized to locally heat the p++GaN 135 andp-GaN 134 layers in desired locations. This causes damage to the p++GaNand p-GaN layers in the selected places and increases the resistivity ofthe p++GaN and p-GaN material in these desired locations. In theremainder of the LED manufacturing process, the highly reflective layer136 is formed over the p++GaN layer 135. A layer 137 of encapsulant isthen formed over the high reflective layer, and a barrier metal layer138 is formed over the encapsulant to form a device wafer structure. Thecarrier 141 is then wafer bonded to the device wafer structure via bondmetal 139. The original substrate upon which layers 132-135 were grownis then removed, and electrodes 142 and 131 are added.

The damaged portions of the p++GaN and p-GaN layers of FIG. 8 areidentified by reference numerals 144-152. The damaged portions arerelatively less conductive than are the other undamaged portions of thep-GaN and p++GaN layers. Due to the lateral placement and spacing ofthese relatively less conductive portions 144-152, electrical current inthe lateral dimension is distributed uniformly where the current flowsvertically through the active layer 133, except for the portion of theactive layer disposed directly underneath electrode 131 where there isno current flow through the active layer. Light generation is thereforesubstantially uniform in all areas of the active layer except for thearea under electrode 131.

FIG. 9 is a cross-sectional diagram of an embodiment of a vertical LEDdevice 130 where the current blocking structures are formed by etchingaway selected portions of the p++GaN layer. The epitaxial layers 162-165of the LED are grown on a substrate to make the device wafer structureas described above. After the p++GaN layer 165 is formed, the currentblocking structures 173-181 are formed by etching away selected portionsof the highly doped p++GaN layer 165 to create non-ohmic contact regionsbetween metal 166 and p-GaN layer 164. Etching away of portions of thep++GaN layer 165 is performed by standard semiconductor processingtechniques such as Reactive Ion Etching (RIE) or another suitableprocessing method. After the formation of the current blockingstructures 173-181, the highly reflective layer 166 is formed over thep++GaN layer 165, and layer 167 of encapsulant is formed over the highlyreflective layer, and a barrier layer 168 is formed over the encapsulantto form a device wafer structure. The carrier 171 is then wafer bondedto the device wafer structure via a layer of bond metal 169. Theoriginal substrate of the device wafer structure is then removed, andelectrodes 172 and 161 are added.

In the regions where the p++GaN layer was etched away, current flow willbe blocked or impeded due to the poor contact between metal of thehighly reflective layer 166 and the p-GaN layer 164. Current will,however, be encouraged to flow where highly conductive metal layer 166makes a good low-resistance ohmic contact with p++GaN layer 165.

FIG. 10 is a cross-sectional diagram of a part of a lateral LED device190 that includes distributed current blocking structures in accordancewith one novel aspect. Lateral LED device 190 includes metal p-electrode191, a transparent conductor layer 192 (for example, Indium Tin Oxide),p++GaN layer 193, p-GaN layer 194, active layer 195, n-GaN layer 196,growth substrate 197, metal n-electrode 198, strip-shaped currentblocking structure 199, and a plurality of current blocking structures200-203. A distributed flow of current 204 is shown passing down betweenadjacent current blocking structures 199-203. Areas of light generation205 are also shown. These areas of light generation 205 are not directlyunder p-electrode 191.

To cause the lateral LED device 190 of FIG. 10 to emit light, a voltageis placed across metal p-electrode 191 and n-electrode 198. Currentflows from p-electrode 191, through ITO layer 192, p++GaN layer 193,p-GaN layer 194, active layer 195, and n-GaN layer 196 to n-electrode198. The current blocking structures 199-203 are distributed across aplanar surface 206 of p++GaN layer 193. Strip-shaped current blockingstructure 199 is directly under metal p-electrode 191 and preventselectrical current flow from p-electrode 191 into the region of theactive layer below strip-shaped current blocking structure 199. Instead,the current flows laterally through ITO layer 192 and into p++GaN layer193 in areas that are not covered by current blocking structures. Thecurrent blocking structures 199-203 are spaced from each other such thatlight generation 205 in the portion of the active layer 195 that is notdirectly underneath p-electrode 191 is substantially uniform, whereasthere is substantially no light generated in the portion of the activelayer 195 that is directly underneath p-electrode 191.

FIG. 11 is a flowchart of a method 200 in accordance with a first novelaspect. An LED is manufactured by forming a strip-shaped currentblocking structure (step 201). The strip-shaped current blockingstructure extends in a first direction, wherein a first square area A, asecond square area B, and a third square area C abut one another andextend in the order A, B, C in a row in a second direction perpendicularto the first direction and away from the strip-shaped current blockingstructure. Each of areas A, B and C is a square area of 400 squaremicrons.

A plurality of current blocking structures is formed (step 202) suchthat at least a first one of the plurality of current blockingstructures covers at least part of A, such that at least a second one ofthe plurality of current blocking structures covers at least part of B,such that least a third one of the plurality of current blockingstructures covers at least part of C. The plurality of current blockingstructures covers X percent of A, covers Y percent of B, and covers Zpercent of C. In one specific example, X>Z. See, for example, thespecific distribution of the disc-shaped current blocking structures inFIG. 5, where X>Y>Z.

A strip-shaped electrode is formed (step 203) so that the strip-shapedelectrode is disposed directly above the strip-shaped current blockingstructure. Current flow through the strip-shaped electrode causes lightto be emitted from the LED.

In one example of the method 200 of FIG. 11, the strip-shaped currentblocking structure is strip-shaped current blocking structure 42 of FIG.5, the plurality of current blocking structures is the plurality ofcurrent blocking structures 46-61 of FIG. 5, and the strip-shapedelectrode is the strip-shaped electrode 41 of FIG. 5. The strip-shapedelectrode 41 is narrower than the underlying strip-shaped currentblocking structure 42. Although the strip-shaped electrode isillustrated in the flow of FIG. 11 as being formed after thestrip-shaped current blocking structure and after the plurality ofcurrent blocking structures, this flow is exemplary and is presentedjust for illustrative purposes. In some examples, the strip-shapedelectrode is formed before the forming of the strip-shaped currentblocking structure and before the forming of the plurality of currentblocking structures.

In one example, the forming of the strip-shaped current blockingstructure of step 201 and the forming of the plurality of currentblocking structures of step 202 is accomplished by impairing ordestroying selected areas of a p++GaN layer and a p-GaN layer. Inanother example, the forming of the strip-shaped current blockingstructure of step 201 and the forming of the plurality of currentblocking structures of step 202 is accomplished by etching away selectedareas of a p++GaN layer to form selected areas of non-ohmic contact.

Although certain specific embodiments are described above forinstructional purposes, the teachings of this patent document havegeneral applicability and are not limited to the specific embodimentsdescribed above. The plurality of current blocking structures can besized and spaced in many ways. Some of the plurality of current blockingstructures can be of one size, whereas others can be of another size.Some of the plurality of current blocking structures can be of oneshape, whereas others can be of another shape. In one example, thecurrent density of an area is decreased by increasing the size of theblocking structures where the distance between the structures, center tocenter, is constant. In another example, the current density of an areais decreased by decreasing the space between adjacent current blockingstructures of the same size. Although not shown in FIG. 5, theseparation between adjacent current blocking structures of avertically-extending row can be made to increase as a function of howfar the row is separated from the vertically-extending edge 66 of thestrip-shaped current blocking structure 42. The farther the row isseparated from edge 66, the more the separation between current blockingstructures of the row.

In one example, the current blocking layer is a mesh or other unitarystructure having holes rather than a plurality of separate features. Theporosity of such a mesh current blocking layer is varied extendinglaterally across the LED so that current flow through the active layerof the LED is substantially uniform, except for in areas of the activelayer disposed directly underneath an opaque metal electrode where thereis substantially no current flow. Accordingly, various modifications,adaptations, and combinations of various features of the describedembodiments can be practiced without departing from the scope of theinvention as set forth in the claims.

1-21. (canceled)
 22. A light emitting device comprising: a semiconductorlayer; a strip-shaped electrode formed on the semiconductor layer andincluding at least one opening, wherein current flows through thestrip-shaped electrode causes light to be emitted from the lightemitting device; a strip-shaped current blocking structure disposeddirectly underneath the strip-shaped electrode; a first row of aplurality of current blocking structures formed along a periphery of theopening; and a second row of a plurality of current blocking structuresformed parallel to the first row such that the first row is disposedbetween the second row and the strip-shaped current blocking structure,wherein a proportion of a region covered by the plurality of currentblocking structures decreases in a direction away from the strip-shapedcurrent blocking structure in the plan view.
 23. The light emittingdevice of claim 22, wherein the plurality of current blocking structuresare formed in the opening in the plan view.
 24. The light emittingdevice of claim 22, wherein the opening has a rectangular shape in theplan view.
 25. The light emitting device of claim 24, wherein theplurality of current blocking structures are formed along four sides ofthe rectangular shape of the opening in the plan view.
 26. The lightemitting device of claim 22, wherein a first distance between thestrip-shaped current blocking structure and the first row is smallerthan a second distance between the first row and the second row.
 27. Thelight emitting device of claim 22, wherein the strip-shaped electrodeincludes a plurality of openings, and the plurality of current blockingstructures including the first row and the second row are formed in eachof the openings.
 28. A light emitting device comprising: a semiconductorlayer; a strip-shaped electrode formed on the semiconductor layer andincluding at least one opening, wherein current flows through thestrip-shaped electrode causes light to be emitted from the lightemitting device; a strip-shaped current blocking structure disposeddirectly underneath the strip-shaped electrode; a first row of aplurality of current blocking structures formed along a periphery of theopening; and a second row of a plurality of current blocking structuresformed parallel to the first row such that the first row is disposedbetween the second row and the strip-shaped current blocking structure,wherein a proportion of a region of the semiconductor layer throughwhich the current flows increases in a direction away from thestrip-shaped electrode in the plan view.
 29. The light emitting deviceof claim 28, wherein the plurality of current blocking structures areformed in the opening in the plan view.
 30. The light emitting device ofclaim 28, wherein the opening has a rectangular shape in the plan view.31. The light emitting device of claim 30, wherein the plurality ofcurrent blocking structures are formed along four sides of therectangular shape of the opening in the plan view.
 32. The lightemitting device of claim 28, wherein a first distance between thestrip-shaped current blocking structure and the first row is smallerthan a second distance between the first row and the second row.
 33. Thelight emitting device of claim 28, wherein the strip-shaped electrodeincludes a plurality of openings, and the plurality of current blockingstructures including the first row and the second row are formed in eachof the openings.
 34. A light emitting device comprising: a semiconductorlayer; a rectangular strip-shaped electrode formed on the semiconductorlayer and including at least one opening, the rectangular strip-shapedelectrode having a long side in a first direction and a short side in asecond direction; a strip-shaped current blocking structure disposedunderneath the strip-shaped electrode; and a plurality of currentblocking structures disposed on a surface of the semiconductor layeralong with the strip-shaped current blocking structure, wherein theproportion of the surface covered by the plurality of current blockingstructures decreases in the second direction.
 35. The light emittingdevice of claim 34, wherein each of the plurality of current blockingstructures has a disc shape.
 36. The light emitting device of claim 34,wherein a current flow from the strip-shaped electrode flows between thecurrent blocking structures such that the current flow through thesurface is substantially uniform in areas not underneath thestrip-shaped electrode.
 37. The light emitting device of claim 34,further comprising one or more intervening layers between thestrip-shaped electrode and the strip-shaped current blocking structure.38. The light emitting device of claim 34, wherein the plurality ofcurrent blocking structures are plasma damaged regions of thesemiconductor layer.
 39. The light emitting device of claim 34, whereinthe plurality of current blocking structures are formed in the openingin a plan view.
 40. The light emitting device of claim 34, wherein theopening has a rectangular shape in a plan view.
 41. The light emittingdevice of claim 40, wherein the plurality of current blocking structuresare formed along four sides of the rectangular shape of the opening inthe plan view.